METHOD FOR FORMING COPPER WIRING

摘要

For the purpose of forming a copper wiring having excellent filling properties and adhesion to a foundation layer by a CVD process, a foundation layer composed of a V-containing or Ti-containing film is formed on a substrate surface, which is provided with a hole or the like, by a CVD process using a tetravalent amide-type vanadium organic metal gas as the raw material and tertiarybutylhydrazine or the like as the reducing gas, and a copper-containing film is formed thereon, thereby filling the hole or the like and forming a wiring. This forming method can be applied to the field of copper wiring in the semiconductor industry.