METHOD OF FORMING FIELD OXIDE IN FLASH MEMORY DEVICE,申请号KR20040078297-传众专利搜索

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发明名称	METHOD OF FORMING FIELD OXIDE IN FLASH MEMORY DEVICE
摘要
申请公布号	KR20060029382(A)	申请公布日期	2006.04.06
申请号	KR20040078297	申请日期	2004.10.01
申请人	HYNIX SEMICONDUCTOR INC.	发明人	LEE, KEUN WOO
分类号	H01L27/115	主分类号	H01L27/115
代理机构		代理人
主权项
地址

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