| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device provided with copper interconnection structure. <P>SOLUTION: A passivation layer 32 is formed on a semiconductor substrate. The passivation layer is selected from material (for example: Ta) which is metallurgically stable when the passivation layer is bonded to interconnection material. The passivation layer 32 is formed between an interconnection portion 31 and a wire 30. Direct contact between Al and Cu is avoided by the passivation layer 32. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
