SEMICONDUCTOR ELEMENT AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To make a semiconductor laminate structure of a semiconductor element as simple as possible.

SOLUTION: Disclosed is the semiconductor element which has a group III nitride-based compound semiconductor layer formed on a substrate layer made of a metal nitride layer without interposing a low-temperature grown buffer layer, and the metal nitride layer is made of rufous titanium nitride. The rufous titanium nitride is obtained by enriching the nitrogen in titanium nitride.

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