| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing an area of an external electrode for a bonding pad and capable of being miniaturized. SOLUTION: In the semiconductor device, a base contact window 7 and an emitter contact window 8 are formed directly to a passivation film 6. The semiconductor device has a base electrode 9 and an emitter electrode 10 connected to a p-type base diffusion layer 3 and an n<SP>++</SP>emitter diffusion layer 4 respectively by aluminum wiring buried to each window. The base electrode 9 and the emitter electrode 10 are formed directly on the passivation film 6, respectively. COPYRIGHT: (C)2006,JPO&NCIPI |
