发明名称 HIGH-FREQUENCY POWER AMPLIFIER
摘要 PROBLEM TO BE SOLVED: To improve linearity in high output operation in a high-frequency power amplifier using a bipolar transistor. SOLUTION: A capacitor 111 is connected between the base and the ground of a transistor 104 for supplying bias, thus reducing variations in the base voltage of the transistor 104 for supplying bias when inputting a high-frequency signal and improving linearity in the power amplifier. In the power amplifier connected in multiple stages, a bias circuit can be made common, which is useful for miniaturization. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006093906(A) 申请公布日期 2006.04.06
申请号 JP20040274302 申请日期 2004.09.22
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 NAKAMURA MORIO;YAMAMOTO SHINJI
分类号 H03F3/24;H03F1/32;H03F3/19 主分类号 H03F3/24
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