发明名称 SUBSTRATE PROCESSING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a substrate processing apparatus capable of controlling temperatures with high precision and high controllability without being restricted by temperature zone when performing a plurality of kinds of deposition processings. SOLUTION: The substrate processing apparatus comprises a processing chamber for processing a substrate; a heating means for heating the processing chamber; a temperature detecting means for detecting the temperature in the processing chamber; a power supply value calculation means for obtaining a power supply value to the heating means based on the temperature detected by the temperature detection means; a correction means for correcting the power supply value, such that the correlation between the power supply value calculated by the power supply calculation means and the detected temperature can be expressed by a linear function; and a heat controlling means for controlling the power to the heating means, based on the correction value of the power supply value corrected by the correction means. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006093194(A) 申请公布日期 2006.04.06
申请号 JP20040273131 申请日期 2004.09.21
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 YAMAGUCHI HIDETO
分类号 H01L21/205;C23C16/52;H01L21/22 主分类号 H01L21/205
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