| 摘要 |
In the semiconductor laser element and the monolithic two-wavelength semiconductor laser device, an active layer 6 is formed above an n-type GaAs substrate 1 , and a p-type AlGaInP clad layer 8 is formed above the active layer 6 . Furthermore, an n-type AlGaInP block layer 13 having a refractive index nearly equal to that of the p-type AlGaInP clad layer 8 is formed on the side of the ridge portion formed on the p-type AlGaInP clad layer 8.
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