摘要 |
The invention relates to an integrated circuit having a semiconductor component ( 10 ) comprising a first p-type region ( 12 ) and a first n-type region ( 11 ) adjoining the first p-type region ( 12 ), which together form a first pn junction having a breakdown voltage. According to the invention, a further n-type region adjoining the first p-type region or a further p-type region ( 13 ) adjoining the first n-type region ( 11 ) is provided, the first p-type or n-type region ( 11 ) and the further n-type or p-type region ( 13 ) adjoining the latter together forming a further pn junction having a further breakdown voltage, the first pn junction and the further pn junction being connected or connectable to one another in such a way that, in the case of an overloading of the semiconductor component, on account of a current loading of the first pn junction, first of all the further pn junction breaks down.
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