DEPOSITION OF RUTHENIUM METAL LAYERS IN A THERMAL CHEMICAL VAPOR DEPOSITION PROCESS

摘要

A method for depositing a Ru metal layer on a substrate is presented. The method includes providing a substrate in a process chamber, introducing a process gas in the process chamber in which the process gas comprises a carrier gas, a ruthenium-carbonyl precursor, and hydrogen. The method further includes depositing a Ru metal layer on the substrate by a thermal chemical vapor deposition process. In one embodiment of the invention, the ruthenium-carbonyl precursor can contain Ru3(CO)12. and the Ru metal layer can be deposited at a substrate temperature resulting in the Ru metal layer having predominantly Ru(002) crystallographic orientation.