发明名称 |
Semiconductor diode, electronic component, voltage source inverter and control method |
摘要 |
The invention relates to a semiconductor diode, an electronic component and to a voltage source converter. According to the invention, the semiconductor diode having at least one pn-transition can be switched between a first state and a second state. In comparison to the first state, the second state has a greater on-state resistance and a smaller accumulated charge, and the pn-transition is capable of blocking both in the first state as well as in the second state with at least one predetermined blocking ability. An MOS-controlled diode is hereby obtained in which the transition from the on-state to the blocking state is simplified and is thus not critical with regard to the temporal sequence of the control pulses.
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申请公布号 |
US2006071280(A1) |
申请公布日期 |
2006.04.06 |
申请号 |
US20040547175 |
申请日期 |
2004.02.18 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
BAKRAN MARK-MATTHIAS;ECKEL HANS-GUNTER |
分类号 |
H01L29/76;H01L29/36;H01L29/739 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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