发明名称 Semiconductor diode, electronic component, voltage source inverter and control method
摘要 The invention relates to a semiconductor diode, an electronic component and to a voltage source converter. According to the invention, the semiconductor diode having at least one pn-transition can be switched between a first state and a second state. In comparison to the first state, the second state has a greater on-state resistance and a smaller accumulated charge, and the pn-transition is capable of blocking both in the first state as well as in the second state with at least one predetermined blocking ability. An MOS-controlled diode is hereby obtained in which the transition from the on-state to the blocking state is simplified and is thus not critical with regard to the temporal sequence of the control pulses.
申请公布号 US2006071280(A1) 申请公布日期 2006.04.06
申请号 US20040547175 申请日期 2004.02.18
申请人 SIEMENS AKTIENGESELLSCHAFT 发明人 BAKRAN MARK-MATTHIAS;ECKEL HANS-GUNTER
分类号 H01L29/76;H01L29/36;H01L29/739 主分类号 H01L29/76
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