SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR LIGHT EMITTING ELEMENT

摘要

PROBLEM TO BE SOLVED: To enhance performance of a semiconductor element by improving flatness of each semiconductor layer crystal-growing on a GaN substrate in a dimension equivalent of a target semiconductor element.

SOLUTION: There are provided: a GaN substrate 11 having a surface orientation defined by an absolute value of an off-angle of the surface from ä0001} plane towards <1-100> direction lying in a range of 0.14 degree to 0.35 degree and by an absolute value of an off-angle of the surface from ä0001} plane towards <11-20> direction lying in a range of 0.00 degree to 0.06 degree, a nitride III-V compound semiconductor layer 12 laminated on the GaN substrate 11; and an element structure part 13-20 on the nitride III-V compound semiconductor layer 12.

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