GERMANIUM ADDITIONAL SOURCE FOR COMPOUND SEMICONDUCTOR, METHOD OF MANUFACTURING COMPOUND SEMICONDUCTOR USING THE SAME, AND COMPOUND SEMICONDUCTOR

摘要

PROBLEM TO BE SOLVED: To provide an additional source of germanium with high safety when manufacturing a Ge-doped compound semiconductor.

SOLUTION: When the Ge-doped compound semiconductor such as a Ge-doped GAN layer 4 is formed on an AIN high-temperature buffer layer 2 and an undoped GAN base layer 3 which are stacked on a sapphire substrate 1, an organic germanium compound is used as an impurity source which contains at least one selected from a group composed of tetramethylgermanium and tetraethylgermanium as the additional source of germanium.

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