| 摘要 |
PROBLEM TO BE SOLVED: To provide a novel structure in a semiconductor device to eliminate or reduce leakage current and junction capacitance. SOLUTION: A structure of a semiconductor device and method of fabricating the same is disclosed. The semiconductor structure includes first and second source/drain regions; a channel region disposed between the first and second source/drain regions; a buried well region in physical contact with the channel region; and buried barrier regions disposed between the buried well region and the first source/drain region and disposed between the buried well region and the second source/drain region, wherein the buried barrier regions are adapted for preventing current leakage and dopant diffusion between the buried well region and the first source/drain region, and current leakage and dopant diffusion between the buried well region and the second source/drain region. COPYRIGHT: (C)2006,JPO&NCIPI
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