| 摘要 |
PROBLEM TO BE SOLVED: To provide a vapor deposition system where the light-emitting element of a nitride semiconductor of high light-emitting efficiency and a long life can be manufactured with a good yield. SOLUTION: The vapor deposition system comprises a flow channel 12 for making material gas flow in parallel to a substrate 13 from a material gas supply port 17 toward a material gas discharge port 18, a substrate holder 14 mounting the substrate 13 so as to face the opening part 16 of the flow channel, and a heater 15 for heating the substrate provided at the lower part of the substrate holder 14. The system is provided with a means for reducing leakage of the material gas through between the opening part of the flow channel and the substrate holder. COPYRIGHT: (C)2006,JPO&NCIPI
|
