| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that polymer mainly consisting of CF<SB>x</SB>is stuck to the peripheral edge part a rear surface side and side end face of a wafer when an SiO<SB>2</SB>film and an SiOC film on a semiconductor wafer are etched using a plasma of a CF system. SOLUTION: After the finish of etching to the wafer, ashing is carried out in the state of stopping supply of gas for heat transmission supplied between the front face of a mounting table and the rear face of the wafer and stopping applying voltage to an electrostatic zipper. Thus, the heat transmission efficiency between the wafer and the mounting table is lowered to raise the temperature of the wafer to accelerate reaction of the plasma and the polymer, and the gas for heat transmission is stopped and a gap between the wafer and the mounting table is expanded, so that the plasma in the case of ashing easily makes a detour to the rear face side of the wafer. COPYRIGHT: (C)2006,JPO&NCIPI
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