| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser device obtaining laser beams having a low aspect ratio by a simple constitution. SOLUTION: In the laser device, an n-type buffer layer 102, an n-type clad layer 103, an active layer 104 made of a GaInP material, a p-type first clad layer 105, a p-type etching stop layer 106 and a p-type second clad layer 107 worked in a ridge shape are formed successively on an n-type GaAs substrate 101. In the laser device, an n-type current block layer 108 is formed so as to coat the side face of the p-type second clad layer 107, and a p-type contact layer 109 is formed on the n-type current block layer 108. A region 110 of a window structure with diffused zinc, is formed near the end face of a resonator as a current non-injection region, and the n-type current block layer 108 and the p-type contact layer 109 are removed in the ridge inclined plane or upper section of the same region. COPYRIGHT: (C)2006,JPO&NCIPI
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