| 摘要 |
The present invention provides a high-voltage junction field effect transistor (JFET), a method of manufacture and an integrated circuit including the same. One embodiment of the high-voltage junction field effect transistor (JFET) ( 300 ) includes a well region ( 320 ) of a first conductive type located within a substrate ( 318 ) and a gate region ( 410 ) of a second conductive type located within the well region ( 320 ), the gate region ( 410 ) having a length and a width. This embodiment further includes a source region ( 710 ) and a drain region ( 715 ) of the first conductive type located within the substrate ( 318 ) in a spaced apart relation to the gate region ( 410 ) and a doped region ( 810 ) of the second conductive type located in the gate region ( 410 ) and extending along the width of the gate region ( 410 ). In place of or addition to the doped region ( 810 ), the high-voltage junction field effect transistor (JFET) ( 300 ) may includes a conductive field plate ( 920 ) located over and extending along the width of the gate region ( 410 ).
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