NON-VOLATILE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a non-volatile memory device and a method of fabricating the memory device. SOLUTION: The non-volatile memory device of the present invention includes first and second impurity diffusion regions formed on a semiconductor substrate and a memory cell formed over a channel region between the first and second impurity diffusion regions of the semiconductor substrate. The memory cell includes a stacked gate structure formed on the channel region, and first and second select gates formed on both sidewalls of the stacked gate structure on the channel region. Because the first and second select gates are self-aligned in a spacer configuration on both sidewalls of the stacked gate structure, it is enabled to decrease the area of the memory cell, thereby improving the degree of integration of the device. COPYRIGHT: (C)2006,JPO&NCIPI