METHOD OF EVALUATING SEMICONDUCTOR WAFER

摘要

PROBLEM TO BE SOLVED: To provide a method of evaluating a semiconductor wafer for specifying location of a fault of a BOX film in the SOI wafer. SOLUTION: The method of evaluating the semiconductor wafer evaluates the SOI wafer formed of a laminate of an embedded insulating film (BOX film) 2 and SOI layer 1 on a silicon substrate 3 with an artificial MOSFET. In this evaluation method, the drain side electrodes 6 are separately surrounded at the front surface of the SOI layer 1 and line type source side electrode 5 having the disconnected cut-away part is allocated. An ammeter 7 is connected respectively to the source side electrode 5 and drain side electrode 6. A leak point of the BOX film 2 is specified through comparison between the current values in the source side electrode 5 and drain side electrode 6 measured with the ammeter 7 by applying a voltage to the gate side electrode 4 in contact with the rear surface of the silicon substrate 3. COPYRIGHT: (C)2006,JPO&NCIPI