| 摘要 |
PROBLEM TO BE SOLVED: To solve the problems that a MOSFET of small chip size is difficult to have an electrostatic breakdown resistance of≥200 V with a model machine, and that an MOSFET which needs to operate at a high speed can not be improved in switching speed although the electrostatic breakdown resistance can be improved when a gate resistance is connected. SOLUTION: The pattern width of a low-density area before diffusion is 11 to 13μm and an actual low-density area width is 6 to 8μm. Consequently, an electrostatic breakdown resistance of≥200 V can be realized with a machine model even when the chip size is small. The pattern width varies with poly-silicon thickness, but an electrostatic breakdown resistance of≥200 V can be realized when the resistance conversion value of a Zener diode is≤130Ω. Further, the gate resistance is not necessary, so the MOSFET is adaptive to high-speed operation. COPYRIGHT: (C)2006,JPO&NCIPI
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