| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus and a method for producing a nanostructure material which have both of characteristics of a thermal CVD method and a plasma CVD method, perform manufacturing of the nanostructure material such as carbon nanotube on a substrate having a relatively large area in high productivity, and can be utilized also for producing a high quality ZnO thin film or p-type ZnO. SOLUTION: The apparatus for producing the nanostructure material has a reaction chamber, a raw gas supplying means for supplying a raw gas into the reaction chamber, a vacuum-exhausting means for making the inside of the reaction chamber into a vacuum state, a heating means for heating the inside of the reaction chamber, a plasma generation means for generating plasma in the reaction chamber, a substrate holder provided in the reaction chamber, and a bias-impressing means capable of impressing a bias voltage to the substrate holder. The heating means is an electric furnace, and the plasma generation means is arranged at the outside of the electric furnace. COPYRIGHT: (C)2006,JPO&NCIPI
|
