| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and an apparatus for manufacturing a GaAs single crystal, by which the generation of an oxide in a GaAs melt can be suppressed and the GaAs single crystal having a high single crystallization ratio can be manufactured. SOLUTION: In the method for manufacturing the GaAs single crystal, comprising growing the single crystal by bringing a seed crystal 7 into contact with the GaAs melt 9s in a crucible 5 heated in a chamber 2 and then pulling the seed crystal 7 while rotating it, an element 11 having a free energy of formation of an oxide lower than that of the GaAs melt 9s is arranged at a place other than the GaAs melt. The apparatus 1 for manufacturing the GaAs single crystal by the method is also provided. COPYRIGHT: (C)2006,JPO&NCIPI
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