METHODS AND APPARATUS FOR MONITORING A PROCESS IN A PLASMA PROCESSING SYSTEM BY MEASURING IMPEDANCE
摘要
<p>A method for in-situ monitoring a process in a plasma processing system having a plasma processing chamber is disclosed. The method includes positioning a substrate in the plasma processing chamber. The method also includes striking a plasma within the plasma processing chamber while the substrate is disposed within the plasma processing chamber. The method further includes obtaining a measured impedance that exists after the plasma is struck, the measured impedance value having a first value when the plasma is absent and at least a second value different from the first value when the plasma is present. The method also includes correlating the measured impedance value with an attribute of the process, if the measured impedance value is outside of a predefined impedance value envelope.</p>
申请公布号
WO2006036820(A2)
申请公布日期
2006.04.06
申请号
WO2005US34226
申请日期
2005.09.23
申请人
LAM RESEARCH CORPORATION;CHENG, CHIA, CHENG;GUINEY, TIMOTHY, J.;ANNAPRAGADA, RAO;DESHMUKH, SUBHASH