| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve problems in techniques of improving performances in microprocessing of a semiconductor devices using high energy beams, X-rays, electron beams or EUV (extreme ultraviolet) light, to provide a positive resist composition having all of satisfying high sensitivity, high resolution, preferable line edge roughness and preferable exposure latitude, and to provide a method for forming a pattern by using the composition. <P>SOLUTION: The positive resist composition contains: a resin which contains a repeating unit having at least two kinds of specified structures and which is decomposed by the effect of an acid to increase the solubility with an alkali developer solution; and a compound which generates an acid by irradiation with active rays or radiation. The method for forming a pattern is carried out by using the composition. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
