| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a positive resist composition having preferable sensitivity, resolution and a pattern profile, small line edge roughness and preferable dissolution contrast for forming a pattern with electron beams, EUV rays (extreme ultraviolet at near 13 nm wavelength) or X-rays, and to provide a method for forming a pattern by using the above composition. <P>SOLUTION: The positive resist composition for electron beams, EUV rays or X-rays is provided which contains: (A) a cyclic compound which comprises four or more structures having a phenolic hydroxyl group or a phenolic hydroxyl group protected with an acid decomposing group, and the solubility of which with an alkali developing solution increases by the effect of an acid; (B) a resin having a repeating unit of a specified structure and having solubility with an alkali developer solution; and (C) a compound which generates an acid by irradiation with active rays or radiation. The method for forming a pattern by using the above composition is also provided. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
