METHOD FOR VACUUM-COATING WITH A PHOTO-SEMICONDUCTING LAYER AND USE OF SAID METHOD

摘要

The invention relates to a method for vacuum-coating an object with a photo-semiconducting layer. Said method is characterized by the following steps: adjusting the temperature of the surface-near area of the object to a value in the range of from -40 °C to +250 °C prior to coating; operating a reactive pulsed magnetron sputter process with at least one electrically conducting target containing titanium as the main component in a working gas containing at least one inert gas and oxygen; controlling the process in accordance with the purpose of application of the coated object in such a manner as to ensure formation of mainly titanium oxide in a defined ratio of the atomic composition of the layer of titanium to oxygen such as 1: (2+x), whereby x ranges from -0.5 to +0.3; adjusting such a ratio of the rates of ionized and neutral particles during layer formation that a portion of at least 5 percent of titanium oxide is formed as a crystalline modification thereof and that the parameters of the sputter process are selected in such a manner that the surface temperature of the object does not exceed a maximum temperature of 300 °C.