发明名称 |
Diamond substrate formation for electronic assemblies |
摘要 |
Electronic assemblies and methods for forming assemblies including a diamond substrate are described. One embodiment includes providing a diamond support and forming a porous layer of SiO<SUB>2 </SUB>on the diamond support. A diamond layer is formed by chemical vapor deposition on the porous layer so that the porous layer is between the diamond support and the diamond layer. A polycrystalline silicon layer is formed on the diamond layer. The polycrystalline silicon layer is polished to form a planarized surface. A semiconductor layer is coupled to the polysilicon layer. After coupling the semiconductor layer to the polysilicon layer, the diamond support is detached from the diamond layer by breaking the porous layer. The semiconductor layer on the diamond layer substrate is then further processed to form a semiconductor device.
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申请公布号 |
US2006073640(A1) |
申请公布日期 |
2006.04.06 |
申请号 |
US20040960303 |
申请日期 |
2004.10.06 |
申请人 |
HU CHUAN;CHRYSLER GREGORY M;LU DAOQIANG |
发明人 |
HU CHUAN;CHRYSLER GREGORY M.;LU DAOQIANG |
分类号 |
H01L21/50 |
主分类号 |
H01L21/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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