| 摘要 |
<p>A high frequency switch (11) is configured by connecting a first diode (D1) which is a switching element, a second diode (D2), inductors (SL1, SL2), capacitors (C5, C6) and a resistance (R). A diode having a relatively small charge storage quantity in the ON status is used for the first diode, and a diode having a relatively large charge storage quantity in the ON status is used for the second diode. Namely, the diodes having different part numbers are used for the first diode and the second diode, respectively, and the diode of a part number having a relatively small charge storage quantity is used for the first diode, and the diode of a part number having a relatively large charge storage quantity is used for the second diode. Alternatively, the charge storage quantities of diodes of the same lot in the ON status are measured and classified, a diode having a relatively small charge storage quantity is used for the first diode and a diode having a relatively large charge storage quantity is be used for the second diode.</p> |
