<p>[PROBLEMS] To provide a process for forming low-resistance copper-containing film at low temperature by CVD method. [MEANS FOR SOLVING PROBLEMS] A copper-containing film is formed by CVD method on a barrier layer made from an organometallic raw material gas and a reducing gas by the use of a copper complex represented by the general formula (I) which has a ß-diketonato ligand represented by the general formula (I)': (I)' (I-I) (I) wherein Z is hydrogen or alkyl of 1 to 4 carbon atoms; X is a group represented by the general formula (I-I) (wherein R<sup</p>
