| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a technology for suppressing the dielectric breakdown in a semiconductor device. <P>SOLUTION: This semiconductor device comprises a semiconductor substrate (not shown in the figure), an interlayer insulating film 102 formed on the semiconductor substrate, and a multi-layer insulating film 140 provided on the interlayer insulating film 102. This semiconductor device comprises an electrically conductive body which includes a Cu film 120 and a barrier metal film 118, and is provided passing through the multi-layer insulating film 140. The barrier metal 118 is provided to cover the side surface and the base of the Cu film 120. This semiconductor device comprises an insulating film 116 provided between the multi-layer insulating film 140 and the electrically conductive body (the Cu film 120 and the barrier metal film 118). <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
