| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which is made superior in a characteristic and reliability by optimizing the inclination of the side face of a capacitor. SOLUTION: This semiconductor device comprises a capacitor which contains a semiconductor substrate 10; a lower electrode 21 provided on the upper side of the semiconductor substrate, a dielectric film 22 provided on the lower electrode, and an upper electrode 23 provided on the dielectric film; and a mask film 31 which is provided on the upper electrode, and is used as a mask when the pattern of the capacitor is formed. The inclination of the side face of the mask film is gentler than the inclination of the side face of the upper electrode and the inclination of the side face of the dielectric film. COPYRIGHT: (C)2006,JPO&NCIPI
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