| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage device in which a plurality of selection gates can be connected easily. SOLUTION: The nonvolatile semiconductor storage device is provided with a plurality of cell transistors CTR formed on a semiconductor substrate, the plurality of selection gates SG formed on the semiconductor substrate, and element separating areas STI formed between the cell transistors CTR and between the selection gates SG. Each cell transistor CTR is provided with a floating gate FG formed on the semiconductor substrate through a gate insulating film, source/drain regions SD formed in the semiconductor substrate correspondingly to both side walls of the floating gate FG, and inter-gate insulating films IGI formed on the side walls of the floating gate FG. The cell transistor CTR is also provided with control gates CG formed on the side walls of the floating gate FG through the inter-gate insulating films IGI. The selection gates SG are formed on the gate insulating film and connected to each other through conductive members CM embedded in the selection gates SG. COPYRIGHT: (C)2006,JPO&NCIPI
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