发明名称 |
Method of forming fine particle array on substrate and semiconductor element |
摘要 |
An object of the present invention is to provide a method of forming fine particles on a substrate in which reoxidization of reduced fine particles is suppressed. Reduced fine particles (FeO fine particles) are formed by embedding metal oxide fine particles (Fe<SUB>2</SUB>O<SUB>3 </SUB>fine particles) fixed on a p type silicon semiconductor substrate into a silicon oxidized film, and carrying out a heat treatment in a reducing gas atmosphere. Presence of the silicon oxidized film enables suppression of reoxidization of the reduced fine particles (FeO fine particles) due to exposure to the ambient air.
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申请公布号 |
US2006070494(A1) |
申请公布日期 |
2006.04.06 |
申请号 |
US20050284910 |
申请日期 |
2005.11.23 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
YOSHII SHIGEO;UEDA MICHIHITO;MATSUKAWA NOZOMU;YAMASHITA ICHIRO |
分类号 |
B22F9/20;B28B23/00;H01L21/28;H01L21/8247;H01L27/115;H01L29/06;H01L29/423;H01L29/788;H01L29/792 |
主分类号 |
B22F9/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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