| 发明名称 |
Low 1c screw dislocation 3 inch silicon carbide wafer |
| 摘要 |
A high quality single crystal wafer of SiC is disclosed having a diameter of at least about 3 inches and a 1 c screw dislocation density of less than about 2000 cm<SUP>-2</SUP>.
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| 申请公布号 |
US2006073707(A1) |
申请公布日期 |
2006.04.06 |
| 申请号 |
US20040957806 |
申请日期 |
2004.10.04 |
| 申请人 |
POWELL ADRIAN;BRADY MARK;MUELLER STEPHEN G;TSVETKOV VALERI F;LEONARD ROBERT T |
发明人 |
POWELL ADRIAN;BRADY MARK;MUELLER STEPHEN G.;TSVETKOV VALERI F.;LEONARD ROBERT T. |
| 分类号 |
H01L21/302;H01L21/461 |
主分类号 |
H01L21/302 |
| 代理机构 |
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