发明名称 Semiconductor device
摘要 The present invention provides inhibiting an electrical leakage caused by anion migration. A trenched portion 15 is provided as ion migration-preventing zone between a source electrode 4 and a gate electrode 5 . The trenched portion 15 is formed so as to surround a periphery of the source electrode 4.
申请公布号 US2006071309(A1) 申请公布日期 2006.04.06
申请号 US20050236563 申请日期 2005.09.28
申请人 NEC ELECTRONICS CORPORATION 发明人 KATO TOMOKI
分类号 H01L21/50;H01L23/495 主分类号 H01L21/50
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