发明名称 FERROELECTRIC POLYMER MEMORY DEVICE INCLUDING POLYMER ELECTRODES AND METHOD OF FABRICATING SAME
摘要 A method of fabricating a ferroelectric memory module with conducting polymer electrodes, and a ferroelectric memory module fabricated according to the method.The ferroelectric polymer memory module includes a first set of layers including: an ILD layer defining trenches therein; a first electrode layer disposed in the trenches; a first conductive polymer layer disposed on the first electrode layer; and a ferroelectric polymer layer disposed on the first conductive polymer layer. The module further includes a second set of layers including: an ILD layer defining trenches therein; a second conductive polymer layer disposed in the trenches of the ILD layer of the second set of layers; and a second electrode layer disposed on the second conductive polymer layer. The first conductive polymer layer and the second conductive polymer layer cover the electrode layers to provide a reaction and/or diffusion barrier between the electrode layers and the ferroelectric polymer layer.
申请公布号 WO2006036691(A2) 申请公布日期 2006.04.06
申请号 WO2005US33811 申请日期 2005.09.21
申请人 INTEL CORPORATION;ROCKFORD, LEE;ANDIDEH, EBRAHIM 发明人 ROCKFORD, LEE;ANDIDEH, EBRAHIM
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