METHODS AND APPARATUS FOR MONITORING A PROCESS IN A PLASMA PROCESSING SYSTEM BY MEASURING SELF-BIAS VOLTAGE
摘要
<p>A method for in-situ monitoring a process in a plasma processing system having a plasma processing chamber is disclosed. The method includes positioning a substrate in the plasma processing chamber. The method also includes striking a plasma within the plasma processing chamber while the substrate is disposed within the plasma processing chamber. The method further includes obtaining a measured self-bias voltage that exists after the plasma is struck, the measured self-bias voltage value having a first value when the plasma is absent and at least a second value different from the first value when the plasma is present. The method also includes correlating the measured self-bias voltage value with an attribute of the process, if the measured self-bias voltage value is outside of a predefined self-bias voltage value envelope.</p>
申请公布号
WO2006036821(A2)
申请公布日期
2006.04.06
申请号
WO2005US34227
申请日期
2005.09.23
申请人
LAM RESEARCH CORPORATION;GUINEY, TIMOTHY, J.;ANNAPRAGADA, RAO;DESHMUKH, SUBHASH;CHENG, CHIA CHENG