发明名称 SAMPLE AND HOLD CIRCUITS
摘要 <p>The voltage produced by an input current (i1) is sampled (Si, S2, S3) and stored on the gate (46) of a Fet (Ti). The stored gate voltage allows the FET to function as the reference current source of a current mirror (T2,T3) which generates an output current (i0) proportional to the sampled input current. The current mirror uses dual gate floating gate FETS (T2,T3) whose mirroring ratio can be finely adjusted by adjusting the bias voltages (Vi, V2) applied to their auxiliary gate electrodes (425,435).</p>
申请公布号 WO2006035230(A1) 申请公布日期 2006.04.06
申请号 WO2005GB03740 申请日期 2005.09.28
申请人 IMPERIAL COLLEGE INNOVATIONS LTD;RODRIGUEZ-VILLEGAS, ESTHER, OLIVIA;CORBISHLEY, PHILIP, GEORGE 发明人 RODRIGUEZ-VILLEGAS, ESTHER, OLIVIA;CORBISHLEY, PHILIP, GEORGE
分类号 G11C27/02;H03H11/02;H03M1/12;(IPC1-7):G11C27/02;H03H15/02;H03M1/00;G06G7/00 主分类号 G11C27/02
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