| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor element with an adhesive layer, in which stealth dicing method or dicing before grinding is used to reduce cracking or chipping of a wafer to obtain a semiconductor element with an adhesive film, resulting in improved productivity and workability in manufacturing of a semiconductor device. SOLUTION: The manufacturing method of a semiconductor element with an adhesive layer includes a process in which a base material film 3, an adhesive layer 2, and a semiconductor wafer 1 are laminated in the order; a process in which the semiconductor wafer 1 is cut at prescribed positions to form a plurality of semiconductor elements; a process in which the base material film 3 is expanded in horizontal direction to form gaps among a plurality of semiconductor elements, for reforming or partially removing the adhesive layer present in the gap among the plurality of semiconductor elements when viewed from the semiconductor wafer 1 side; and a process for cutting the adhesive layer at the reformed part. COPYRIGHT: (C)2006,JPO&NCIPI |
