| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser device which can be manufactured at a low cost, and has high oscillation efficiency by preventing oscillation laser beam from leaking up to an electrode prepared at a ridge side, further, can operate in low power (low threshold current). SOLUTION: In the semiconductor laser device, a p-side electrode 115, contacting with semiconductor layers group 108-114 of a second conductive type, comprises an Ag layer 115a, a Pd layer 115b and an Au layer 115c in order from a side contacting with the semiconductor layers group 108-114 of the above-mentioned second conductive type. Since a refractive index of the above-mentioned Ag layer 115a is smaller enough than that of semiconductor material used for the above-mentioned semiconductor layers group 108-114, oscillated laser beam can be confined inside the above-mentioned semiconductor layers group 108-114 without leaking up to the above-mentioned p-side electrode 115. COPYRIGHT: (C)2006,JPO&NCIPI
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