| 摘要 |
PROBLEM TO BE SOLVED: To provide a sectional sample preparing method which has a means removing easily and effectively a work damaged layer remained on an observation surface of a sectional sample and can accurately perform various measurement for a section of a semiconductor device. SOLUTION: In the method which prepares a sectional sample piece of a semiconductor device having a silicon layer where an impurity is introduced on a silicon substrate, the section of the semiconductor device is exposed, and after doing work of flattening or thinning for the section, the sectional sample is immersed in a treatment liquid which contains hydrogen peroxide, ammonia, and super purity water, and where the concentration of the hydrogen peroxide is equal to the concentration of the ammonia or is higher than the concentration of the ammonia, the work damaged layer is removed, and a uniform film of silicon oxide is formed on the sectional surface where the work damaged layer is removed. COPYRIGHT: (C)2006,JPO&NCIPI
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