| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which enables transfer with higher precision ultra-fine resist pattern by reducing light reflectivity of lower-layer metal and secures selection ratio of masks and metal to form ultra-fine metallizing by implementing the metal etching via a hard mask of an oxide film. SOLUTION: The semiconductor device manufacturing method comprises of the steps of forming, on a metal laminated film, an oxide film layer including a plurality of layers of plasma SiON films 6, 7 of different refractive indices as a reflection preventing film for controlling light reflection from the lower-layer, forming a resist mask 8 to which a metallizing pattern is implemented on the plasma SiON film 7 with the exposure process, forming a metallizing pattern on the oxide film layer with the etching via the resist mask 8, and forming a metallizing pattern to the metal laminated film with the etching process with the oxide film layer to which the metallizing pattern is formed used as the mask material. COPYRIGHT: (C)2006,JPO&NCIPI
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