SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To reduce contact resistance between a first hetero-semiconductor region and a source electrode. SOLUTION: The semiconductor device includes a semiconductor base of first conductive type comprised of an N+carbonated silicon substrate 1 and a drain region 2 comprised of an N-carbonated silicon epitaxial layer, a first hetero-semiconductor region 9 and second hetero-semiconductor region 10 being in contact with one principal surface of the semiconductor base and having a band gap different from that of the semiconductor base, a gate electrode 7 formed via a gate insulating film 6 in a bonding portion of the first hetero-semiconductor region 9 and the semiconductor base, a source electrode 12 connected with the first hetero-semiconductor region 9, and a drain electrode 11 ohmic-connected with the semiconductor base. The semiconductor device is formed from connecting in parallel a plurality of basic unit cells and at least the side of the first hetero-semiconductor region 9 in contact with the source electrode 12 is provided with a contact area 13 of the first hetero-semiconductor region 9 expanding the area for contact with the source electrode 12. COPYRIGHT: (C)2006,JPO&NCIPI