| 摘要 |
PROBLEM TO BE SOLVED: To improve the breakdown voltage of a semiconductor device by raising the strength of an electric field in a drift layer when the semiconductor device is off. SOLUTION: In an IGBT (Insulated Gate Bipolar Transistor), an insulating region 62 is formed as extended in the drift layer 28 up to a buffer layer 26 and arranged while being dispersed along an interface between the buffer layer 26 and the drift layer 28. This insulating region 62 increases the strength of an electric field in the interface between the buffer layer 26 and the drift layer 28. According to this method, the integrated value of the strength of electric field in the drift layer 28 is increased whereby the breakdown voltage of the IGBT is improved. COPYRIGHT: (C)2006,JPO&NCIPI
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