发明名称 FARADAY CUP EQUIPMENT, ION DOPING SYSTEM, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To fine adjust dose amount with no degradation of operating rate by allowing change of the actual value of beam current density with no change in the set value of beam current density, relating to an ion doping equipment in which the beam current density of ion beam is detected with a Faraday cup 31 that receives a part of ion beam, while an ion source is controlled by a control means 40 so that the detected value of the Faraday cup 31 comes to be a set value on the basis of a preset condition. SOLUTION: A semiconductor thin film is provided to the receiving surface of the Faraday cup 31. The temperature of semiconductor thin film is changed to change conductivity of the semiconductor thin film, thus allowing changing of detection sensitivity of the Faraday cup 31. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006093211(A) 申请公布日期 2006.04.06
申请号 JP20040273459 申请日期 2004.09.21
申请人 SHARP CORP 发明人 NAKANISHI TAKESHI
分类号 H01L21/265;H01J37/317;H01L21/20;H01L21/336;H01L29/786 主分类号 H01L21/265
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