发明名称 |
Silicon-containing resist composition and patterning process |
摘要 |
A resist composition is provided comprising a polysiloxane, a specific acid generator, a nitrogen-containing organic compound, and a solvent. The resist composition exerts high-resolution performance without the problem of a T-top profile and is suited for the bilayer resist process using ArF exposure.
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申请公布号 |
US2006073413(A1) |
申请公布日期 |
2006.04.06 |
申请号 |
US20050242270 |
申请日期 |
2005.10.04 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
TAKEMURA KATSUYA;NODA KAZUMI;OHSAWA YOUICHI |
分类号 |
G03C1/76 |
主分类号 |
G03C1/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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