Pattern designing method, photomask manufacturing method, resist pattern forming method and semiconductor device manufacturing method

摘要

There is disclosed a method of designing a pattern comprising: preparing a first design pattern containing a first hole pattern, obtaining a distance between the first hole pattern and a pattern adjacent to the first hole pattern, obtaining an enlarged amount of the first hole pattern based on the distance and a reduction amount of a hole pattern formed in a photoresist film when the photoresist film is heated, and generating a second design pattern containing a second hole pattern which are obtained by enlarging the first hole pattern by the enlarged amount.