发明名称 Method of forming a layer of a doped semiconductor material and apparatus
摘要 <p>A method for production of charge carrier transport (CCT) layers from doped CCT semiconductor materials containing semiconductor matrix material(s) (I) and dopant(s) (II) which increase the conductivity of (I) for charge carriers involves the vaporisation of a mixture of (I) and (II) in one evaporator, followed by deposition on a substrate.</p>
申请公布号 EP1643568(A1) 申请公布日期 2006.04.05
申请号 EP20040023606 申请日期 2004.10.04
申请人 NOVALED AG 发明人 WERNER, ANSGAR;BIRNSTOCK, JAN;MURANO, SVEN
分类号 H01L51/40;C23C14/12 主分类号 H01L51/40
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