发明名称 |
Method of forming a layer of a doped semiconductor material and apparatus |
摘要 |
<p>A method for production of charge carrier transport (CCT) layers from doped CCT semiconductor materials containing semiconductor matrix material(s) (I) and dopant(s) (II) which increase the conductivity of (I) for charge carriers involves the vaporisation of a mixture of (I) and (II) in one evaporator, followed by deposition on a substrate.</p> |
申请公布号 |
EP1643568(A1) |
申请公布日期 |
2006.04.05 |
申请号 |
EP20040023606 |
申请日期 |
2004.10.04 |
申请人 |
NOVALED AG |
发明人 |
WERNER, ANSGAR;BIRNSTOCK, JAN;MURANO, SVEN |
分类号 |
H01L51/40;C23C14/12 |
主分类号 |
H01L51/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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