发明名称 |
Non-volatile memory element with programmable resistance |
摘要 |
<p>A memory element comprises a first number of electrodes and a second number of electrically conducting channels between sub-groups of two of said electrodes, the channels exhibiting an electrical resistance that is reversibly switchable between different states, wherein the first number is larger than two and the second number is larger than the first number divided by two. The electrically conducting channels may be provided in transition metal oxide material, which exhibits a reversibly switchable resistance that is attributed to a switching phenomenon at the interfaces between the electrodes and the transition metal oxide material.</p> |
申请公布号 |
EP1643508(A2) |
申请公布日期 |
2006.04.05 |
申请号 |
EP20050020869 |
申请日期 |
2005.09.24 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ALVARADO, SANTOS F;MEIJER, GERHARD INGMAR;BEDNORZ, GEORG |
分类号 |
G11C13/00;H01L27/24 |
主分类号 |
G11C13/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|